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Adaptive silicon synapse and CMOS neuron for neuromorphic VLSI computing


 
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1. Title Title of document Adaptive silicon synapse and CMOS neuron for neuromorphic VLSI computing
 
2. Creator Author's name, affiliation, country Ziad El-Khatib; Canadian University Dubai; United Arab Emirates
 
2. Creator Author's name, affiliation, country Sherif Moussa; Canadian University Dubai; United Arab Emirates
 
2. Creator Author's name, affiliation, country Firuz Kamalov; Canadian University Dubai; United Arab Emirates
 
2. Creator Author's name, affiliation, country Mustapha C. E. Yagoub; University of Ottawa; Canada
 
3. Subject Discipline(s) Neuromorphic Computing; Artificial Intelligence
 
3. Subject Keyword(s) Adaptive silicon synapse; Neuromorphic computing; Spiking CMOS neuron; Spiking frequency modulation; Tuning synapse time-constant;
 
4. Description Abstract The design of a fully integrated adaptive modified complementary metal-oxide-semiconductor (CMOS) synapse circuit is presented. By using multiple-gated transistor configuration in the modified CMOS synapse an additional branch provide control where the synaptic output current time-constant is tuned. The effect of changing the multiple-gated transistor bias voltage from 0.25 to 0.45 V tunes the spiking output current exponential time-constant range by 200 ms as shown in simulation results. Moreover, a fully-integrated adaptive quadratic integrate-and-fire (QIF) CMOS neuron circuit is presented as well. A differential pair with variable capacitor integrator and a tunable schmitt trigger threshold detector circuit are integrated in the CMOS neuron that can be tuned varying its spiking frequency. The proposed adaptive quadratic integrate-and-fire (AQIF) neuron has the ability to adjust the spiking frequency without changing the input current. The simulation results show the proposed CMOS neuron circuit spiking frequency can be tuned from 58.4 to 312.5 Hz and its spiking period from 17.1 to 3.2 ms with tuning the bias voltage of variable capacitor integrator. Having a peak voltage Vpeak=0.95 V, a reset voltage Vreset=-0.75 V and a voltage threshold of 0.35 V with a membrane potential range of 1.5 V. The proposed CMOS neuron circuit is designed in 130 nm process with a supply voltage of 1.8 V and a total power dissipation of 1.8 mW.
 
5. Publisher Organizing agency, location Institute of Advanced Engineering and Science
 
6. Contributor Sponsor(s) University of Ottawa
 
7. Date (YYYY-MM-DD) 2025-04-01
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://ijai.iaescore.com/index.php/IJAI/article/view/25789
 
10. Identifier Digital Object Identifier (DOI) http://doi.org/10.11591/ijai.v14.i2.pp1000-1021
 
11. Source Title; vol., no. (year) IAES International Journal of Artificial Intelligence (IJ-AI); Vol 14, No 2: April 2025
 
12. Language English=en en
 
14. Coverage Geo-spatial location, chronological period, research sample (gender, age, etc.)
 
15. Rights Copyright and permissions Copyright (c) 2025 Institute of Advanced Engineering and Science
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